摘要
二维材料与晶体硅形成的异质结太阳电池是当前太阳电池研究热点之一,大多数研究都集中在石墨烯和硅形成的肖特基结太阳电池。为改善器件的能带结构,本研究采用具有一定禁带宽度的n-Mo S2二维半导体材料与p-Si形成异质结太阳电池。通过实验研究了退火时间对Mo S2材料合成的影响,并对Mo S2-Si异质结的暗电流和光电流曲线进行测量和分析。通过异质结模拟软件wx-AMPS对Mo S2-Si异质结结构进行效率计算和能带分析,探讨了薄膜厚度和载流子浓度对器件开路电压的影响。
Heterojunction solar cells formed by two-dimensional materials and crystalline silicon are one of the research highlights in thefield of solar cells. Most researches focus on the graphene-silicon Schottky junction solar cells. To refine the band-gap structure of thesedevices, we have fabricated the two-dimensional semiconductor material of n-Mo S2, which has a band-gap, on the surface of p-Si to formheterojunction solar cells. Our experiment has revealed the effect of annealing time on the synthesis of Mo S2. Dark and light current-voltagecurves of Mo S2-Si heterojunction are measured and discussed. The heterostructure simulation software wx-AMPS is applied for theefficiency calculation and the energy band analysis. The effects of Mo S2 thin film thickness and carrier concentration on the open-circuitvoltage are studied.
出处
《科技导报》
CAS
CSCD
北大核心
2016年第2期39-42,共4页
Science & Technology Review
基金
广州市产学研协同创新重大专项(201508010011)
广东省科技计划项目(2011A060901016)
关键词
二维材料
二硫化钼
太阳电池
异质结
J-V特性
two-dimension material
molybdenum disnlfide
solar cell
heterojunction
J-V character
