摘要
文章阐述了用精确的GaN Angelov模型设计了一款L波段400W内匹配率放大器.选用SiC衬底的GaN器件是为了获得大功率输出以及高效率性能.为了精确设计放大器,采用脉冲I-V测试和多偏置的S参数测试建立起高压GaN大信号模型.采用模型设计的GaN放大器输入输出电路集成在17.4mm×24mm的封装管壳里.最终采用单枚55mm栅宽GaN管芯设计的放大器在48V漏压,100μs脉宽,10%占空比偏置下在1.2~1.4GHz输出功率大于400W,功率增益大于15dB,最高功率附加效率达到81.3%,这是国内L波段400W微波功率放大器的最高效率报道,验证了模型的准确度,实现了极好的电路性能.
This paper describes a L-band 400W gallium nitride(GaN)internally matched power amplifier using an accurate large signal Angelov model.The large gate-periphery GaN devices on SiC substrate are used for achieving the large output power and high efficiency.For designing exactly the power amplifier,the large signal GaN model is founded using measured pulse I-V and S parameters of different bias conditions.Based on the large signal model,the input and output matching circuits and one 55mm GaN transistor are integrated in a 17.4mm×24mm ceramic package.The amplifier finally has the pulse output power of over 400W,the power gain of over 15dB across the band of 1.2-1.4GHz and the max power added efficiency is 81.3%under the pulse drain bias voltage(Vds)of 48V,the duty is 10%with the pulse width of 100μs.The results show that the character of realized amplifier is consistent with the simulation result,which fully indicates the veracity of the developed model.And this is the most highest efficiency of a 400W power amplifier achieved in L-band.
作者
钟世昌
陈堂胜
殷晓星
周书同
ZHONG Shi-chang;CHEN Tang-sheng;YIN Xiao-xing;ZHOU Shu-tong(Southeast University,Nanjing,Jiangsu 210096,China;Nanjing Electronic Devices Institute,Nanjing,Jiangsu 210016,China)
出处
《电子学报》
EI
CAS
CSCD
北大核心
2020年第2期398-402,共5页
Acta Electronica Sinica
