摘要
文中基于第三代半导体GaN功率器件的特点,研制了L波段一体化星载固态功率放大器。通过对承受高功率的多层结构宽边耦合器的仿真,设计了小型化、大功率合成器,将两只80 W内匹配GaN功率器件进行功率合成,经过ALC电路设计,确保了固态功放输出功率的稳定性。实测结果表明,在L波段(f0±40 MHz),固态功放的输出功率达到137 W(51.37 d Bm),功率增益74.7 dB,功率效率48.5%,杂散抑制63 dBc,-25~60℃内,输出功率波动小于0.2dB;热仿真结果显示,在60℃环境下,GaN器件结温为136.98℃。经过了壳温70℃的加速寿命试验,试验时间超过5000小时,固放工作正常。
Based on the third generation of semiconductor GaN,a L band SSPA was introduced in this paper. A miniaturization and large power capacity power divider was designed by using multi-layer structure and broadside-coupled technique,two internally matched power FETs which output power could up to 80 W were used for power combining,the ALC circuit was designed to make sure the stability of the output power. The test of SSPA was shown that it could reach over 137 W（ 51. 37 dBm） in output power,74. 76 dB in power gain,48. 5% in PAE,63 dBc in clutter suppression,the variation of output power was less than 0. 2 dB from-25 - 60 ℃; It could be seen that the junction temperature of the GaN FETs was 136. 98 ℃ by using thermal simulation at 60 ℃. The SSPA had been working 5 000 hours with lift test,the case temperature was 70 ℃.
作者
王晓会
WANG Xiaohui(The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China)
出处
《电子科技》
2018年第7期31-33,37,共4页
Electronic Science and Technology
