摘要
通过改进AZO薄膜的制备工艺,提高了AZO薄膜的光学与电学性能、完善了制备工艺,克服了成膜温度较高等不足,成功制备出性能优良的AZO薄膜.通过对新制备的AZO薄膜样品进行XRD和SEM测试,深入分析了影响薄膜结构和电性能的物理因素,获得了最佳制备工艺条件.在室温34℃、溅射功率1000 W、溅射气压0.052 Pa、溅射时间87 min条件下,溅射产额最高,离子能量最高,可形成性能最优的AZO薄膜结构和形貌.
By improving the preparation process of AZO thin film,the optical and electrical performances of AZO thin film and the preparation process are improved,AZO films with excellent performances are successfully prepared as the problem of the high temperature of film formation is solved.XRD and SEM tests are carried out on newly prepared AZO thin films,the physical factors affecting the structure and electrical properties of the film are analyzed in depth,and the best preparation conditions are obtained.At room temperature 34℃,the sputtering yield and ionic energy is the highest under the conditions of 1000 W sputtering power,0.052 Pa sputtering pressure and 87 min sputtering time.The structure and morphology of AZO film with the best performance can be formed.
作者
杨珮艺
王永顺
吴蓉
YANG Pei-yi;WANG Yong-shun;WU Rong(School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China)
出处
《兰州交通大学学报》
CAS
2020年第1期113-116,共4页
Journal of Lanzhou Jiaotong University
关键词
溅射
掺铝氧化锌
电性能
光学特性
sputtering
zinc oxide thin film doped with Al
electrical performances
optical characteristics
