摘要
以溶胶-凝胶法制备Al掺杂的ZnO(AZO)薄膜。为了提高薄膜的结晶性,在氩气气氛中将所制备的薄膜分别在400℃、500℃和550℃温度下退火处理,研究不同退火温度对薄膜样品形貌和性能的影响。结果表明,所制备的AZO薄膜为六角纤锌矿结构,有很明显的c轴择优取向;随着退火温度增加,薄膜的结晶性与电导率均先增加后减小,其在可见光区域的平均透过率约为85%。当退火温度为500℃时,制备的AZO薄膜性能最佳,其品质因素可以达到2 051.04Ω^(-1)·cm^(-1)。
Al doped ZnO(AZO)thin films were prepared by sol-gel method.In order to improve the crystallinity of prepared thin films,the thin films were annealed under argon atmosphere at 400℃,500℃and 550℃,respectively.Then,the effects of annealing temperature on the morphologies and properties of the AZO thin films were investigated.The results showed that the thin films with hexagonal wurtzite-structured grains,exhibited highly c-axis preferred orientation.With the increase of annealing temperature,the crystallinity and conductivity of the films increased firstly and then decreased.The average transmittance was found to be about 85%in the visible region.When the annealing temperature was 500℃,the performance of the AZO film was the best,and the figue of merit could reach 2 051.04Ω^-1·cm^-1.
作者
赵婷婷
薛剑鸣
王威
郝凌云
陈相均
张昕曜
支国伟
ZHAO Tingting;XUE Jianming;WANG Wei;HAO Lingyun;CHEN Xiangjun;ZHANG Xinyao;ZHI Guowei(Jinling Institute of Technology,Materials Engineering College,Nanjing 211169;Nanjing KeRun Lubricants Co.,LTD,Nanjing 211106)
出处
《电子器件》
CAS
北大核心
2019年第1期5-8,共4页
Chinese Journal of Electron Devices
基金
江苏省大学生创新训练重点项目(201713573005Z)
金陵科技学院博士启动资金项目(jit-b-201612)
金陵科技学院科研激励项目(jit-fhxm-201609)
关键词
半导体材料
AZO薄膜
溶胶-凝胶法
退火温度
semiconductor material
AZO thin film
sol-gel method
annealing temperature
