摘要
为提升Ga N基高压LED芯片的出光性能,优化了芯片发光单元之间隔离沟槽的宽度。当隔离沟槽宽度为20μm时,芯片的电学性能和光学性能最优。当注入电流为20 m A时,正向电压为50.72 V,输出光功率为373.64 m W,电光转换效率为36.83%。采用镜面铝基板和陶瓷基板进行了4颗芯片串联形式的COB封装。镜面铝基板的热导率和反射率均高于陶瓷基板,可提升HV-LED器件在大注入电流和高温时的发光性能。当注入电流为20 m A且基板温度为20℃时,镜面铝基板封装的HV-LED器件的正向电压是198.9 V,发光效率达122.2 lm/W。
In order to enhance the light-output performance of Ga N-based high-voltage light-emitting diodes( HV-LEDs),the width of isolation trench between light-emission cells was optimized. The electrical and optical performance is the best while the width is 20 μm. When the injection current is 20 m A,the forward voltage is 50. 72 V,the light-output power is 373. 64 m W,and the electrooptical conversion efficiency is 36. 83%. Then,four chips were connected in series and packaged in reflective aluminum substrate or ceramic substrate using chip-on-board( COB) technology. Since the thermal conductivity and reflectivity are higher for reflective aluminum substrate comparing to ceramic substrate,the packaged HV-LEDs with reflective aluminum substrate show better light-output performance at a high injection current or a high temperature. On condition that the injection current is 20 m A and the substrate temperature is 20 ℃,the forward voltage and the light-output efficiency of HV-LEDs packaged using reflective aluminum substrate are 198. 9 V and 122. 2 lm / W,respectively.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2015年第6期692-698,共7页
Chinese Journal of Luminescence
基金
863国家高技术研究发展计划(2014AA032609)
广东省战略性新兴产业发展专项资金(2011A081301004
2012A080302003
2012A080304015)资助项目
关键词
高压LED
芯片制备
封装基板
发光效率
high-voltage light-emitting diode
chip fabrication
package substrate
light-output efficiency
