摘要
文章针对130纳米CMOS工艺标准单粒子闩锁效应问题,开展了Complementary Metal Oxide Semiconductor(CMOS)器件单粒子闩锁效应产生的物理机理分析,提出了一套适合于不同类型标准单元版图加固方法;基于SMIC0. 13μm工艺进行了物理建模仿真和电路实现。仿真结果显示,在遭受LET值为120MeV/mg/cm^2的重离子辐射时,所设计的电路未发生闩锁效应。
By analyzing the mechanism of single event latch-up(SEL),a method of SEL hardening by design has been represent to improve the SEL tolerance of CMOS stand cell in 130-nm process. The TCAD simulation has been utilized to analyze the improvement between different structures by modeling CMOS devices and the key design parameter had been optimizing to reduce the area of layout. The results show that with the proposed layout structure,the CMOS stand cell has a significant improvement in SEL preventing and no SEL effects were observed up to a LET of 120 MeV/mg/cm^2.
作者
王轩
巨艇
周国昌
赖晓玲
唐硕
WANG Xuan;JU ting;ZHOU Guochang;LAI Xiaoling;TANG Shuo(China Academy of Space Technology(Xi’an ), Xi’an710000,China)
出处
《空间电子技术》
2019年第3期44-47,共4页
Space Electronic Technology
