摘要
通过化学还原的方法制备得到S-Ni复合材料,在常温条件下,采用抗坏血酸对石墨烯进行还原氧化后,对制备所得S-Ni复合材料进行包覆,得到复合材料RGO@S-Ni,进而形成一种可抑制穿梭效应的石墨烯包覆结构。对制备所得复合材料微观图像进行计算机分析,当复合材料在1.5～3.0 V、0.2 m A/cm^2的电流密度下充放电时,其比容量为886.106 m Ah/g,第200次循环时比容量为673.254 m Ah/g,容量保持率约为75.98%。
S-Ni composite materials were prepared through the chemical reduction method.Under the condition of normal temperature,after oxide reduction of graphene by ascorbic acid,RGO@S-Ni composite material was obtained by coating the prepared S-Ni composite.Thus,a kind of graphene coating structure was formed,which can inhibit the shuttle effect.The micro images of the composite materials were analyzed by computer.When composite materials charge and discharge in 1.5V-3.0V,and 0.2 mA/cm2,the specific capacity was 886.106 mAh/g,and the specific capacity was 673.254 mAh/g after 200th cycles,the capacity retention rate was about 75.98%.
作者
张勇
李芳
ZHANG Yong;LI Fang(Tangshan Vocational College,Tangshan Hebei 063000,China)
出处
《电源技术》
CAS
CSCD
北大核心
2018年第12期1893-1894,1897,共3页
Chinese Journal of Power Sources
