摘要
针对传统热网络模型不适用于IGBT短路情况下结温测量的问题,通过现场瞬态短路破坏性试验,在分析现场瞬态短路情况下IGBT失效机理的基础上,界定了IGBT短路失效时的临界能量值,发现了临界能量值在不同初始温度和不同母线电压情况下的演化规律,并建立了有限元热电耦合模型.结果表明,随着直流母线电压、初始温度和电流密度的增加,IGBT的短路维持时间和临界能量值会大幅度减小,而IGBT发生失效的临界温度点与初始温度的大小无关;在短路过程中IGBT失效前热量的传递仅达到焊料层,且短路瞬间其结温最高点分布在耗尽层的边界处.
Aiming at the problem that the traditional thermal network model is not suitable for IGBT shortcircuit junction temperature measurement,based on the analysis of the failure mechanism of IGBT in the case of transient short-circuit,the energy value of IGBT short-circuit failure was defined.The evolution law of the critical energy value of IGBT under different initial temperature and different bus voltage was found,and finite element thermoelectric coupling model was established.The simulation results showed that with the increase of DC bus voltage,initial temperature and current density,the short-circuit maintenance time and critical energy value of IGBT would be greatly reduced while the critical temperature point of IGBT failure was independent of the initial temperature;the heat transfer before IGBT failure only reached the solder layer during the shortcircuit process,and the maximum temperature point of IGBT was distributed at the boundary of the depleted layer at the instant of short-circuit.
作者
窦智峰
晋玉祥
郭新飞
DOU Zhifeng;JIN Yuxiang;GUO Xinfei(College of Electric and Information Engineering,Zhengzhou University of Light Industry,Zhengzhou 450002,China)
出处
《轻工学报》
CAS
2018年第6期101-108,共8页
Journal of Light Industry
基金
河南省自然科学基金项目(162300410321)
关键词
绝缘栅型晶闸管
瞬态短路
结温测量
临界能量值
有限元热电耦合模型
insulated gate bipolar transistor(IGBT)
transient short-circuit junction temperature meaurement
critical energy
finite element thermoelectric coupling model
