摘要
采用JGP-300型超高真空磁控溅射镀膜机在蓝宝石衬底上制备了Ni O薄膜。通过X射线衍射(XRD)仪、原子力显微镜(AFM)、紫外-可见分光光度计(UV-VIS)、霍尔(Hall)测试,研究了氧分压对Ni O薄膜晶体结构、表面形貌、光学特性和电学特性的影响。研究结果表明:Ni O薄膜具有单一的(111)衍射峰。当氧分压为60%时,Ni O薄膜具有较好的结晶性能。随着氧分压的升高,Ni O薄膜表面逐渐变光滑。由(αhν)2-hν曲线得到Ni O薄膜的禁带宽度为3. 60～3. 77 e V。所有Ni O薄膜都具有良好的p型导电特性,空穴载流子浓度为5. 45×10^(17)～2. 16×10^(19)cm^(-3)。
NiO thin films were prepared on sapphire substrates by using a JGP-300 ultra-high vacuum magnetron sputtering coating apparatus. The effect of oxygen partial pressure on the crystal structure,surface topography,optical properties and electrical properties of Ni O films were studied by using X-ray diffractometer( XRD),atomic force microscope( AFM),ultraviolet spectrophotometer( UV-VIS) and Hall test. The results show that Ni O film has a single( 111) diffraction peak. The Ni O film exhibits better crystal performance when the oxygen partial pressure is 60%. With the oxygen partial pressure increasing,the surface of Ni O film gradually becomes smoother. The band gap of Ni O films obtained by( αhν)2-hν curve is 3. 60 ~ 3. 77 eV. All Ni O films have good p-type conductivity characteristics,and the hole carrier concentration is 5. 45 × 1017~2. 16 × 1019 cm-3.
作者
王致远
高玉涛
冯镇南
赵洋
王辉
WANG Zhiyuan;GAO Yutao;FENG Zhennan;ZHAO Yang;WANG Hui(Physics & Engineering School,Henan University of Science & Technology,Luoyang 471023,China;Henan Key Laboratory of Photoelectric Energy Storage Materials & Applications,Henan University of Science & Technology,Luoyang 471023,China)
出处
《河南科技大学学报（自然科学版）》
CAS
北大核心
2019年第2期96-99,111,共5页
Journal of Henan University of Science And Technology:Natural Science
基金
国家自然科学基金项目(61674052
11404097)
河南科技大学大学生研究训练计划(SRTP)基金项目(2017164
2017165)
关键词
NIO
磁控溅射
氧分压
p型半导体材料
薄膜特性
NiO
magnetron sputtering
oxygen partial pressure
p-type semiconductor material
film properties
