摘要
采用射频磁控溅射方法,常温条件下以N2作为N掺杂源,在玻璃基底制备了N掺杂Al:ZnO薄膜。在真空氛围下对样品进行了不同温度的退火处理15 min。通过X射线衍射、霍尔效应测试、紫外-可见光谱和X射线光电子能谱(XPS)仪分析了退火对样品结构和光电性能的影响。结果表明真空400℃退火15 min时成功制备出性能优异的p型ZnO薄膜,其空穴载流子浓度为3.738×1020cm^(-3),电阻率为1.299×10^(-2)Ω·cm,样品可见光透射率达到了85%以上。XPS分析说明No受主缺陷的含量大于(N2)o施主缺陷导致薄膜实现了p型转变。
The N-doped Al： ZnO（ AZO） thin films were deposited by RF magnetron sputtering on glass substrate. The influence of the annealing temperature on the microstructures and properties of the N-doped AZO was investigated with X-ray diffraction,ultraviolet infrared spectroscopy,X-ray photoelectron spectroscopy and Hall Effect measurement. The results show that the annealing temperature had a major positive impact. To be specific,annealing at 400℃ for 15 min significantly improved the microstructures,electrical and optical properties of the N-doped AZO coatings. The improved properties include a hole carrier concentration of 3. 738 × 10^20 cm^-3,a resistivity of 1. 299 ×10^-2Ω·cm and an optical transmittance of over 85% in the visible light region. The fact that the density of Noacceptor defects is higher than that of the（ N2）odonor defects possibly explains the transformation from n-type into ptype of the N-doped AZO coatings.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2018年第2期117-120,共4页
Chinese Journal of Vacuum Science and Technology
基金
福建省自然科学基金项目(2017J01714)
福建省教育科研基金资助项目(JAT160462)
福建省三明学院科研基金资助项目(B201611)
关键词
Al:ZnO薄膜
P型ZNO
退火处理
光电性能
Al ： ZnO thin solid films, P-type ZnO, Annealing process, Photoelectric performance
