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功率循环条件下厚膜组装VDMOS的热阻结构函数分析 被引量:3

Thermal Analysis of Thick Film Assembly VDMOS in Power Circle by Structure Function
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摘要 该文以混合集成VDMOS管为对象进行功率循环试验,将温循试验后的热阻变化进行对比分析。首先基于结构函数对VDMOS样品的热阻变化的因素进行分析。其次利用有限元分析法计算模块中各部分温度分布情况,并对比模块内部各层温度随时间的变化状态。最后结合Coffin-Manson关系外推不同温度变化条件下的循环次数。 Thermal resistance degeneration of hybrid integrated VDMOS is tested by active power circle accelerated life testing.Firtly,analysis the thermal resistance degeneration of VDMOS by Structure Function.Secondly,analysis the temperature changes of packaging parts by Finite Element Method.Key factor is the prediction of thesolder temperature during power cycling.A comparison of the solder joint lifetime was carried out between active power cycling based on Coffin-Manson model.
作者 汪张超 朱雨生 周斌 刘俊夫 Wang Zhang-chao;Zhu Yu-sheng;Zhou Bin;Liu Jun-fu(East China Research Institute of Microelectronics,Anhui HeFei 230088;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangdong Guangzhou 510610)
出处 《电子质量》 2017年第10期71-78,共8页 Electronics Quality
关键词 功率循环 结构函数 热阻分析 厚膜组装 VDMOS Phase11 Power Cycle Structure Function Thermal Analysis Thick Film Assembly VDMOS Phase11
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