摘要
我们用辉光放电法在较低的衬底温度下(90℃)获得了掺磷微晶化硅(n^+μC-Si).并对微晶化与工艺条件之间的关系进行了详细的研究,在150℃衬底温度,2％掺杂时获得了电导率近30(Qcm)^(-1),电导激活能近似为零的微晶化材料.对微昌化材料的结构进行了小角度X光衍射,拉曼散射谱的分析,并用扫描电镜观察了形貌.这种材料的晶粒较小而且结构均匀.又由于生长温度低,rf功率小,有利于与其它器件工艺匹配.文章对实验结果进行了讨论.
Crystallization of phosphorous-doped hydrogenated silicon was initiated at asubstrate tem-perature below 90℃ and low RF power.The relationship between microcrystallization andthe deposition condition has been studied in detail.The μc-Si:H material with conductivity of30(Ωcn)^(-1) and conductivity activation energy 2meV was obtained at substrate temperature of150℃.Through the analysis of small angle X-ray diffraction, Raman scattering and SEM,we found the microcrystalline size is small and the morphologies are uniform.With the abovefeature, this kind of p-doped μc-Si:H material has great advantage in matching with othertechnology of devices.Finally,the experiment results are discussed.
基金
国家自然科学基金
