摘要
氢化非晶硅 (a -Si:H)是无序硅网络中嵌入一定量H原子的非晶态硅—氢合金膜 ,结构上存在许多不稳定的弱Si-Si键及各种畸变键 ,在光、电老化过程中 ,它们会断裂或变形 ,导致缺陷态的增加 ,使材料性能变坏。a -Si:H微晶化后 ,这些缺点将得到有效的克服。结果发现 ,用 0 .3- 0 .5MeV、注入束流密度 1.3× 10 19cm- 2 s- 1的高能电子辐照 10 - 6 0 0s,a -Si:H膜会出现微晶化现象 ,晶粒大小为 10 - 2 0nm ,晶化层厚度为 2 5- 2
Amorphous silicon is amorphous alloy of Si-H. It is random network of silicon with some hydrogen. And its structure has many unstable bonds as weak bonds of Si-Si and distortion bonds of all kinds. The bonds was broken or was out of shape by light and electrical ageing. It induced increase of defective state that causes character of material going to bad. This drawback will be overcome after microcrystallization of amorphous silicon. It was discovered that a-Si:H was microcrystallized by irradiated of electrons with energy of 0.3-0.5MeV, density of electronic beam of 1.3×10 19 cm -1 s -1 and irradiated time of 10-600s. Size of grain is 10-20nm. Thick of microcrystalline lager is 25-250nm.
出处
《辐射研究与辐射工艺学报》
CAS
CSCD
北大核心
2001年第2期144-147,共4页
Journal of Radiation Research and Radiation Processing
基金
国务院侨办重点学科科学基金项目 (0 2 0 930 )资助
关键词
高能电子辐照
微晶化
氢化非晶硅
Irradiation of electron with high energy, Amorphous silicon, Microcrystallization
