摘要
采用高阶补偿方法,设计了一款超低温漂的带隙电压基准,输出电压为1.2 V。该带隙基准源在传统带隙基准电压源电路的基础上,通过四输入运算放大器完成VBE和△VBE的加权相加,在运放的输出端产生和温度无关的基准电压。基于CSMC公司0.5μm CMOS工艺,设计了电路版图,版图面积为331.795μm×213.1μm,在-40～100℃的温度范围内进行仿真,温度系数可达1.415×10^(-6)/℃,输出电压导数的摆幅swing为18.04μV/℃。
An ultra low temperatuxe drift bandgap voltage reference is designed with high order compensation, and the output voltage is 1.2 V. On the basis of the traditional bandgap reference voltage source circuit, the band gap reference completes the weighted addition of the VBE and △VBE through the four input operational amplifier, and produces the base voltage independent of the temperature at the output end of the amplifier. Based on the 0.5 μm CMOS process, CSMC company, the layout of the circuit is designed and the area of the layout is 331.795 μm× 213.1 μm.The simulation results show that the temperature coefficient can reach 1.415×10^-6/℃, the output voltage swing is 18.04 μV/℃, in the temperatuxe range of-40-100 ℃.
作者
蒋祥倩
杜西亮
毕克娜
邹丰谦
JIANG Xiangqian;DU Xiliang;BI Kena;ZOU Fengqian(School of Electronnics Engineerin;Heilongjiang University,Harbin 150000,China)
出处
《电子与封装》
2018年第11期25-29,共5页
Electronics & Packaging
关键词
带隙基准
曲率补偿
温度系数
高阶补偿
Bandgap reference
curvature compensation
temperature coefficient
high order compensation
