摘要
本文提出了高压LDMOS的高温等效电路 ,讨论了LDMOS泄漏电流及本征参数在 2 5℃～ 30 0℃范围内随温度变化规律 .根据本文分析 :源漏pn结的反向泄漏电流决定了LDMOS的高温极限温度 ;导通电阻与温度的关系是 (T/T1) y(y为 1 5～ 2 5 ) .
The paper gives the equivalent circuit of a high voltage LDMOS at very high temperatures,and analyzes performance of leakage current and intrinsic parameters of a LDMOS from 25℃ to 300℃.It may be concluded that the maximal applied temperature of a LDMOS is determined by the reverse leakage current of a pn junction across gate and drain,and the relationship between on-resistance and temperature is ( T/T 1) Z(z is 1.5 to 2.5).
出处
《电子学报》
EI
CAS
CSCD
北大核心
2002年第8期1111-1113,共3页
Acta Electronica Sinica
基金
安徽省自然科学基金 (No .1 0 1 4 2 1 0 4 )
