摘要
基于异质结双极晶体管(HBT)优良的微波特性,精确建模对使用该类器件进行电路设计具有重要的意义。介绍了HBT所具有的独特优越性,采用Gummel-Poon等效电路模型对常用HBT进行了小信号和大信号模型的建立,加入了寄生电感等效衬底寄生参数,测试了SiGe HBT在不同偏置下的S参数及I-V特性曲线,利用半解析方法分析了非线性模型的参数提取,讨论了本征参数和寄生参数的拟合优化。给出了关于HBT大信号和小信号等效电路模型,对比实测参数进行验证,建立模型在测试频率范围内拟合结果和测试结果吻合良好。
Based on the excellent microwave properties of heterojunction bipolar transistors（ HBTs）,accurate modeling is of great significance to design the circuit by using the devices. The unique advantages of HBTs were introduced. The Gummel-Poon equivalent circuit models of large-signal and small-signal were used in the model of HBT. And the parasitic inductance was equivalent to parasitic parameter of substrate. S parameters and I-V characteristic curves under different bias of SiGe HBT were tested. The extracted parameters of the nonlinear model were analyzed by semi-analytical method,and the optimization of the intrinsic parameters and the parasitic parameters were discussed. The HBT largesignal and small-signal equivalent circuit models were presented. Compared with measured parameters over the test frequency range,a good agreement was achieved between simulated and measured results of the model.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第7期520-526,共7页
Semiconductor Technology
