摘要
利用场限环终端结构及 P+I( N- ) N+体耐压结构分析了平面型电力电子器件的阻断能力。提出了一种优化设计阻断能力的新方法 ,通过将器件作成体击穿器件 ,使其终端击穿电压与体内击穿电压之间达成匹配 ,从而可提高器件阻断能力的稳定性和可靠性 ,并降低器件的通态损耗及成本。最后通过制作具有 PIN耐压结构的 GTR和引用国外有关文献验证了该方法的正确性。该方法可直接推广到整流器、晶闸管、GTR、IGBT、IEGT和 MCT等多种平面型电力电子器件设计中。
The blocking capability of planar power electronic devices is analyzed using junction termination structure with field limiting ring and the P +I(N -)N + structure of supporting bulk breakdown voltage. A new optimum design of the blocking capability is advanced in this paper. The method is that the bulk breakdown devices are made via devices so as to make the breakdown equably occurs in interior of devices for achieving the bulk breakdown voltage matches with the termination breakdown voltage, thereby the reliability and stability of devices are improved and the on state loss and cost are reduced substantially. The correctness of this new optimum method is verified by fabricating GTR with PIN voltage tolerance and quoting overseas document. The method is suited for designing of the several of planar power electronic devices such as Rectifier, Thyristor, GTR, IGBT, IEGT and MCT.
出处
《西安理工大学学报》
CAS
2002年第2期154-158,共5页
Journal of Xi'an University of Technology
关键词
平面型电力电子器件
阻断能力
击穿电压
场限环
优化设计
体击穿器件
planar power electronic devices
blocking capability
breakdown voltage
field limiting ring
optimum design
bulk breakdown devices
