摘要
采用计算流体力学软件(CFD)对合成碳化硅的多热源和单热源炉内的温度及压力的变化情况进行数值模拟,同时采用工业试验的方法对模拟结果验证。研究结果表明多热源由于将单个炉芯进行多个分散布置,使得适合碳化硅合成的温区面积明显增加,同时热源的分散也使得温度场更加均匀,未出现局部过热现象,从而减少高温带来的碳化硅过量的分解,而从两种合成炉压力分布情况来看,单热源的局部高压集中在炉底部位最大压力位154.5k Pa,相比而言多热源炉内压力分布较为均匀比较适宜碳化硅的合成,其最高压力为127.3k Pa。
The law of temperature and pressure field of signgle-heat-source and multi-heat-furnace was analyzed by computational fluid dynamics software（CFD）.Simulation results are compared with testing data,and the results show that the multi-heat-source can increases the area of the temperature zone suitable for the synthesis of silicon carbide due to the multiple dispersions of individual turnace cores,and the temperature field more uniform will avoid to decompose silicon carbide.Seen from the two synthesis furnace pressure field,the single heat source furnace centralized on bottom of furnace,the maximum pressure is 154.5 k Pa,the pressure of multi-heat-furnace can ensure smooth synthesis process,the maximum pressure of multi-heat-source is 127.3 k Pa.
作者
孟祥鑫
韩俨
MENG Xiangxin;HAN Yan(Shaanxi Railway Institut;Art and Communication College,Xi＇an Technological Universit)
出处
《工业加热》
CAS
2018年第3期42-45,48,共5页
Industrial Heating
基金
陕西省教育厅科研计划项目(12JK0785)
陕西铁路工程职业技术学院科研基金项目(KY2017-021)
关键词
多热源
碳化硅
温度场
压力场
数值模拟
multi-heat-source
silicon carbide
temperature filed
pressure field
numerical simulation
