摘要
为了发展高性能、低成本和结构简单的ZnO纳米器件,在本文中,利用简便的热分解法,在p型硅(p-Si)基底上制备ZnO纳米晶薄膜,利用场发射扫描电子显微镜(FESEM)、X射线衍射仪(XRD)、紫外-可见分光光度计和荧光光谱仪,分别研究了ZnO纳米晶薄膜的形貌、晶相结构和光学特性。结果显示:在p-Si基底上形成不规则颗粒状ZnO纳米晶,为多晶六方纤锌矿结构。ZnO纳米晶薄膜在可见光区光透过率高于90%,光学带宽为3.26eV,仅在387nm处出现一个很强的近带边(NBE)发射峰。进一步发现ZnO纳米晶薄膜/p-Si异质结在暗态和365nm紫外光照射下都出现整流特性,形成了二极管。在暗态下,该二极管的整流率为3.95(±2.46V),开启电压约为0.7V,理想因子为4.65,反偏饱和电流为4.57×10-8 A。在365nm的紫外光照射下,它的整流率高达24.85(±0.65V),说明它对365nm的紫外光有很高的响应,适合用于紫外光探测器。
In order to develop low-cost ZnO nanodevices with high performance and simple structure,in this paper,ZnO nanocrystalline thin films were prepared on p-type silicon（p-Si）substrates by thermal decomposition method.The morphology,crystalline structure and optical properties of ZnO nanocrystalline thin films were investigated by field emission scanning electron microscopy（FESEM）,X-ray diffractometer（XRD）,ultraviolet-visible（UV-Vis）spectrophotometer and the fluorescence spectroscopy,respectively.The results show that the irregular particle-like ZnO nanocrystals with a polycrystalline hexagonal wurtzite structure are formed on the p-Si substrate.The optical transmittance of ZnO nanocrystalline thin films in the visible region is above 90%,its optical bandgap is 3.26 eV,and only a strong near band edge（NBE）emission peak is found at 387 nm.Moreover,it is found that the ZnO nanocrystalline thin film/p-Si heterojunction exhibits rectifying behavior in the dark and under 365 nm UV illumination,indicating the formation of a diode.In the dark,the rectification ratio,turn-on voltage,ideal factor and reverse-bias saturation current of this diode are 3.95（±2.46 V）,0.7 V,4.65 and 4.57×10^-8 A,respectively.Under 365 nm UV illumination,its rectification ratio is increased sharply to 24.85（±0.65 V）,suggesting that this diode has a high response to 365 nm UV illumination,and it is suitable to be applied as UV photodetectors.
作者
丁和胜
殷磊
袁兆林
任亚杰
黄文登
邓建平
DING He-sheng;YIN Lei;YUAN Zhao-lin;REN Ya-jie;HUANG Wen-deng;DENG Jian-ping(School of Physics and Telecommunication Engineering,Shaanxi University of Technology, Hanzhong 723001, China;Shaanxi Provincial Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong 723001 ,China)
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2018年第5期499-504,共6页
Journal of Optoelectronics·Laser
基金
陕西省自然科学基金(2017JM6090)
陕西省教育厅自然科学基金(16JK1135)资助项目
关键词
ZNO纳米晶
异质结
光透过率
整流率
ZnO nanocrystals
heterojunction
optical transmittance
rectification ratio
