摘要
利用脉冲激光沉积(PLD)技术及水热法分别在p-GaAs外延片上生长了ZnO薄膜和纳米棒.XRD及SEM测试结果表明,在GaAs衬底上生长的纤锌矿ZnO薄膜沿c轴方向生长,而ZnO纳米棒表现出多晶结构.室温下ZnO薄膜/p-GaAs的光致发光谱由一个近紫外发光峰(380nm)、一条中心波长位于550nm的可见发光带以及一个近红外发光峰(910nm)组成,分别对应于ZnO的近带边发射、与ZnO缺陷相关的深能级发射以及p-GaAs中Be受主能级相关的辐射复合.由于ZnO纳米棒膜层较厚且取向性差,ZnO纳米棒/pGaAs的光致发光谱中没有观察到明显的GaAs发光峰.
ZnO films and nanorods were deposited on the p-GaAs epitaxial wafer by pulse laser deposition technology and hydrothermal method. The results of XRD and SEM test indicate that the wurtzite ZnO films on the surface of GaAs have good c-axis orientation,but the structure of the ZnO nanorods are polycrystalline. The room temperature（ RT） photoluminescence spectrum of ZnO films/p-GaAs contains a near ultraviolet emission peak（ 380nm） and a wide luminescence band in visible region centered at 550nm,which are corresponding to the near-band-edge emission and defects related deep-level emission of ZnO. Besides,the near infrared emission centered at 910nm is attributed to the Be acceptor states of p-GaAs. Due to the complexity of structure and thicker layer of ZnO nanorods,there is no obvious photoluminescence peak of GaAs in the spectrum of ZnO nanorods/p-GaAs.
出处
《鲁东大学学报（自然科学版）》
2015年第2期127-130,142,共5页
Journal of Ludong University:Natural Science Edition
基金
山东省高等学校科技计划项目(J14LJ04)
鲁东大学科研基金项目(LY2014006)
