摘要
氧化镓（Ga2O3）超宽禁带半导体材料在高频大功率器件领域具有巨大的应用潜力和前景,近几年已成为国内外研发的热点。概述了Ga2O3半导体材料在功率器件应用领域的特性优势和不足,重点介绍了日本、美国和国内的Ga2O3功率半导体器件的研发现状。详细介绍了目前Ga2O3肖特基势垒二极管（SBD）、Ga2O3金属氧化物半导体场效应晶体管（MOSFET）以及新型Ga2O3功率器件的最新研究成果。归纳出提高Ga2O3单晶和外延材料质量、优化Ga2O3功率器件结构和制造工艺是Ga2O3功率器件未来的主要发展趋势,高功率、高效率、高可靠性和低成本是Ga2O3功率器件未来的主要发展目标。最后总结了我国与美国、日本在Ga2O3功率半导体领域的技术发展差距,以及对未来我国在Ga2O3功率半导体技术方面的发展提出了建议。
As an ultra-wide bandgap semiconductor material,gallium oxide（ Ga2O3） has huge development potential and prospects in the high frequency and high power application field,and has been an international research hotspot in the last few years. The characteristics advantages and disadvantages of the Ga2O3 semiconductor material in the power device application field are summarized. The current research and development status of Ga2O3 power semiconductor devices in Japan,America and China are introduced emphatically. The latest research achievements of Ga2O3 Schottky barrier diodes（ SBDs）,Ga2O3 metal oxide semiconductor field effect transistors（ MOSFETs） and new-structure Ga2O3 power devices are introduced in detail. It is summarized that improving the quality of Ga2O3 single crystal and epitaxial materials and optimizing the fabrication process and structure of Ga2O3 power devices are the main development trends,and higher power,higher efficiency,higher reliability and lower cost of Ga2O3 power devices are the main development goals. Finally,the technological development gap between China and other countries in the Ga2O3 power semiconductor field is summarized,and the developmental suggestions for domestic Ga2O3 power semiconductor technology are put forward.
作者
孙学耕
张智群
Sun Xuegeng1, Zhang Zhiqun2(1. Xiamen Ocean Vocational College, Xiamen 361100, China; 2. Fujian Polytechnic of lnformation Technology, Fuzhou 350003, Chin)
出处
《半导体技术》
CAS
CSCD
北大核心
2018年第4期241-249,284,共10页
Semiconductor Technology
