摘要
β-Ga_2O_3薄膜因其禁带宽度大,稳定性高,生产成本低等优势,被认为是在光电探测器、发光器件等领域非常有前景的材料之一。但β-Ga_2O_3较低的导电率限制了其在某些领域的应用,通过掺杂技术改进β-Ga_2O_3薄膜在光学和电学的性能吸引了大量科研者的目光。本文介绍了几种常用的掺杂手段及掺杂对β-Ga_2O_3薄膜结构和光电特性的影响,并对以后的研究工作进行了展望。
β-Ga2O3 thin film has been considered as one of the most promising materials in the field of photoelectric detector and light emitting devices because of its wide band gap,high stability and low production cost. However,the low conductivity of β-Ga2O3 has limited its application in some fields.And improving the optical and electrical properties of β-Ga2O3 thin films by doping method has attracted many researchers ＇ attention. This paper introduces several common doping methods and the effect of doping on the structure and photoelectric properties of β-Ga2O3 thin film,and the future research work is also prospected.
出处
《人工晶体学报》
CSCD
北大核心
2017年第9期1683-1690,共8页
Journal of Synthetic Crystals
基金
国家自然科学基金(60876006
60376007)
北京市教育委员会科技计划重点资助项目(KZ201410005008)
