摘要
通过磁控射频溅射的方法分别在石英玻璃基底上和硅〈111〉基底上沉积In掺杂CdO透明导电薄膜。利用XRD、紫外可见分光光度计和霍尔效应测量仪测试薄膜的结构、光学和电学性能。一定量的In掺杂可将CdO的光学吸收边从2．2eV提高至3．4eV，甚至更高。同时适量的In掺杂可明显改善CdO薄膜的电学性能，在提高其电子浓度的同时也降低电阻率，获得最低5．8×10-5Ω·cm的电阻率，同时吸收边为3．24eV的透明导电薄膜。In掺杂的CdO薄膜作为一种性能良好的薄膜材料有较好的发展前景。
Through the method of RF magnetron sputtering on quartz glass substrate and silicon substrate 〈111〉 deposited on indium doped cadmium oxide transparent conductive film. By XRD, UV-VIS spectrophotometer and Hall effect measurement instrument to test the structure, optical and electrical properties of the film. A certain amount of In doping can increase the optical absorption edge of CdO from 2.2 eV to 3.4 eV, or even higher. At the same time, the proper amount of In doping can significantly improve the electrical properties of CdO thin films, increase the electron concentration and decrease the resistivity. We obtain the lowest resistivity of 5.8 ×10-5Ω·cm, and the transparent conductive film with the same absorption edge 3.24 eV. Therefore, the improvement of optical and electrical properties makes the In doped CdO thin film as a transparent conductive material with great application value.
作者
冯绍文
刘少煜
祝巍
Feng Shaowen, Liu Shaoyu, Zhu Wei(Center for Physical Experiments, School of Physics Science, University of Science and Technology of China, Hefei 230026, Chin)
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2018年第3期769-774,共6页
Acta Energiae Solaris Sinica
基金
国家基础科学人才培养基金(J1103207)
