摘要
设计了一种大量程硅压阻式压力传感器,通过理论模型分析优化传感器结构尺寸,保证薄膜的线性变化和抗过载能力;并通过有限元建模分析可动薄膜位移及应力随压力变化关系,对结构进行优化设计;同时用有限元仿真验证理论分析的正确性。通过理论与仿真优化分析,提出了采用C型膜片一体化硅压阻式压力传感器结构,可动薄膜选用方膜边长为1 000μm,厚度为50μm,实现0~2 MPa的压力测量。
A wide measurement range pressure sensor was designed. The sensor dimension was optimized through theoretical model analysis to ensure the film linear change and the ability of resisting overload. The structure design was optimized through the analysis of variations of the displacement and the stress of the movable membrane with the loaded pressure. At the same time the correctness of theoretical model was verified by the finite element simulation.Through theoretical and simulation optimization analysis,the integrated C type diaphragm structure of silicon piezoresistive pressure sensor was proposed. The movable membrane length is 1 000 μm and thickness is 50 μm. The structure design can achieve 0 to 2 MPa pressure measurement.
作者
聂萌
杨恒山
NIE Meng , YANG Hengshan(Key Laboratory of MEMS of Ministry of Education, Southeast University,Nanjing 210096, Chin)
出处
《传感技术学报》
CAS
CSCD
北大核心
2017年第12期1834-1838,共5页
Chinese Journal of Sensors and Actuators
基金
国家科技支撑项目(2015BAF16B01)
国家自然科学基金项目(61474023)
江苏高校品牌专业建设工程项目
关键词
压力传感器
大量程
线性
抗过载
有限元分析
pressure sensor
wide measurement range
linear
overload ability
finite element analysis
