摘要
相变存储被广泛应用于光信息技术中,比如DVD、CD-ROM等。目前相变存储也正在被考虑在非易失存储方面的应用。本文报道了相变材料的热存储优势,特别地,我们展示了存储密度为3.3Tb/in^2的可擦除热相变记录原理,该记录密度比目前的商业光存储技术可达到的存储密度高3倍。我们演示了薄膜纳米加热器的原理,这种薄膜加热器可以实现小于50纳米的超小加热斑点。最后,我们展示了一种示例,薄膜加热器能够以非常高的速度写、擦除、读取存储材料的相位。该文章为基于相变材料的高密度光存储技术提供了重要的前进基石。
Phase-change storage is widely used in optical information technologies(DVD,CDROM and so on),and recently it has also been considered for non-volatile memory applications.This work reports advances in thermal data recording of phase-change materials.Specifically,we show erasable thermal phase-change recording at a storage density of 3.3 Tb inch^(-2),which is three orders of magnitude denser than that currently achievable with commercial optical storage technologies.We demonstrate the concept of a thin-film nanoheater to realize ultra-small heat spots with dimensions of less than 50 nm.Finally,we show in a proof-of-concept demonstration that an individual thin-film heater can write,erase and read the phase of these storage materials at competitive speeds.This work provides important stepping stones for a very-high-density storage ormemory technology based on phase-change materials.
出处
《记录媒体技术》
2009年第1期34-37,共4页
China Mediatech
