摘要
针对5 nm CMOS技术代亟待解决的纳米线释放难题,通过实验探究了HF(6%)∶H_2O_2(30%)∶CH_3COOH(99.8%)=1∶2∶3的混合溶液放置时间对纳米尺度外延堆叠GeSi/Si/GeSi/Si结构释放影响。混合溶液放置时间在48 h内,GeSi层的腐蚀速率会随着溶液的放置时间的增加而变大,48 h后腐蚀速率趋于稳定。另外,在厚度相同的情况下,Ge Si层的腐蚀速率会随着Ge含量的增加而变大。本文实现了腐蚀纳米尺度GeSi的同时没有对Si造成损伤,对于厚度为31.3 nm的GeSi层,腐蚀的深宽比达到了17∶1,而且没有出现倒塌现象。该湿法腐蚀工艺对于5 nm及以下技术代堆叠纳米线制造、SON结构、新型MEMS和传感器件制造等具有一定的借鉴和指导意义。
Herein,we experimentally addressed the release of stacked nanowire（ SNW） for 5 nm CMOS node via wet etching. The influence of the holding time of the Ge Si/Si/Ge Si/Sistacked nano-array in HF-H_2O_2-CH_3COOH solution on the selective etching-rate of the Ge Si sacrifice layer was investigated with scanning electron microscopy,high resolution X-ray diffraction and transmission electron microscopy. The results show that the etching-rate of Ge Si layer depends on the holding time and Ge-content. For example,as the holding time increased,the etching-rate linearly increased,levelling off after 48 h; and with a fixed thickness of Ge Si layer,the etching-rate increased with an increase of the Ge-content.The well-defined nano-structured Ge Si,with a depth-to-width ratio of 17∶ 1 and without a bending problem,was successfully fabricated by wet-etching of the 31. 3 nm Ge Si layer under the optimized conditions.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2018年第2期121-126,共6页
Chinese Journal of Vacuum Science and Technology
基金
02重大科技专项(No.2013ZX02303007,2013ZX02303001)
国家重点研发计划(No.2016YFA0301701)
