摘要
IGBT(Insulated Gate Bipolar Transistor)模块一直朝着更高耐压和更大电流密度的方向发展,因模块内部电气绝缘和局部放电引起的问题也越来越明显。在高电压IGBT模块封装中,通常使用硅凝胶和环氧树脂来对模块进行灌注和密封,以满足其高电场承受能力,提升整个模块的绝缘性能和局部放电表现。目前很多国内外学者已经在这方面进行一系列研究,主要目的在于优化IGBT模块内部的电场分布。本文重点介绍目前研究的几种可以改善IGBT内部电场分布状态的方法,并对局部放电可靠性的提升方法进行总结。
The IGBT （Insulated Gate Bipolar Transistor） modules have been developed for much higher voltage and current density, which leads to serious problems concerning the electrical insulation and partial discharge. The silicone gel and epoxy resin are usually used in the encapsulation of high voltage IGBT module to meet the capability of high electric filed, ensuring performances in the insulation and partial discharge. So far, many efforts have been done to optimize the electric field distribution inner the module. This paper mainly focus on the introductions of these solutions, which could improve the electric field distribution inner the module; Meanwhile, the perspectives are summarized for improving the reliability in partial discharge.
作者
王昭
刘曜宁
WANG Zhao LIU Yaoning(CRRC Yongji Electric Co., Ltd, Xi＇an 710018, China)
出处
《电子元件与材料》
CAS
CSCD
2017年第10期12-18,共7页
Electronic Components And Materials
关键词
IGBT模块
电气绝缘
综述
局部放电
高压
封装
IGBT module
electrical insulation
review
partial discharge
high voltage
encapsulation
