摘要
为了满足微电子机械系统(MEMS)器件制作要求,各向异性腐蚀加工后的硅衬底需具有良好的表面质量。针对MEMS用硅单晶在各向异性腐蚀加工过程中出现的腐蚀表面粗糙、不平整问题,采用常规直拉(Cz)单晶、掺锗直拉单晶和磁场直拉单晶等不同工艺制备了多种硅单晶样品,并测试了其常规电参数、氧杂质浓度和微缺陷等参数。针对各种硅单晶样品,模拟了器件制作过程中各向异性腐蚀实验,获得了硅单晶的腐蚀表面情况,对比得出了影响硅单晶各向异性腐蚀质量的关键因素在于硅单晶内的氧杂质浓度及氧沉淀密度的控制,并从原子表面能和应力等方面推断晶体中氧沉淀缺陷对各向异性腐蚀质量的影响机理。
In order to meet the production requirement of micro-electromechanical system （MEMS） devices, the anisotropic etched silicon substrate is needed to have the good surface quality. The silicon single crystals for MEMS have rough surface and unflatness during the aniso- tropic etching process. For the problems, the various silicon single crystal samples were fabrica- ted by different technologies, including the regular Czochralski （Cz） crystal method, doped-Ge Cz crystal method and magnetic field Cz crystal method and the regular electrical parameters, oxygen impurity concentration and microdefects and other parameters of all silicon single crystal samples were tested. For the various silicon single crystal samples, the anisotropic etching experi- ments were simulated in the process of the device fabrication, and the etching surface states of the silicon single crystals were obtained. Through the comparison, it is concluded that the oxygen impurity concentration control and oxygen precipitation density control in the silicon single crys- tals are the key factors to affect the anisotropic etching qualities of the silicon single crystals. The influence mechanisms of oxygen precipitation defects in the crystal on the anisotropic etching qualities were inferred from the aspects of the atomic surface energy and stress.
出处
《微纳电子技术》
北大核心
2017年第10期720-724,共5页
Micronanoelectronic Technology
