摘要
在集成电路飞速发展的过程中,特征线宽逐渐缩小,并要求无缺陷的衬底硅片。但由于单晶生长过程中会产生空洞性缺陷COP,直接影响了CMOS器件的GOI。通过改变热场温度梯度,可以有效改善单晶的COP,改善后的重掺Sb衬底经外延后,COP被"覆盖",而不对外延层造成影响。
With the rapid development of integrated circuits, characteristic line width is becoming narrower and the substrate must be free from defects. But COP directly affects the GOI of CMOS devices. Through changing the temperature gradient of heat field, the COP can be effectively reduced. After the epitaxial growth, the heavily Sb doped substrate is improved and the COP is covered, and will no longer affect the epitaxial layer.
出处
《上海有色金属》
CAS
2010年第2期78-81,共4页
Shanghai Nonferrous Metals
