摘要
在衬底温度为400℃、射频功率为20 W的条件下,通过改变SiH_4和NH_3的体积流量比、电极(圆环和平板电极)和匀气盘结构,采用等离子体增强化学气相沉积(PECVD)法制备出不同成分的氮化硅薄膜,测量了薄膜的淀积速率、残余应力以及在HF溶液和KOH溶液中的腐蚀速率。实验发现:随着SiH_4和NH_3体积流量比的增大,薄膜的淀积速率变大;相同工艺条件下,采用不同结构的电极淀积的氮化硅薄膜在KOH溶液中的腐蚀速率和腐蚀后的表面形貌都没有明显的差异;相同工艺条件下,使用圆环电极淀积的氮化硅薄膜具有较小的残余应力;使用平板电极淀积的氮化硅薄膜在HF溶液(HF和H_2O的体积比为1∶50)和缓冲氢氟酸(BHF)溶液中有更好的耐腐蚀性;匀气盘对淀积的氮化硅薄膜的淀积速率、残余应力、在HF和KOH溶液中的腐蚀速率几乎没有影响。
The silicon nitride films with different compositions were prepared by plasma enhanced chemical vapor deposition （PECVD） method through changing the volume flow ratio of Sill4 and NH3, the electrode （ring electrode and plate electrode） and gas homogenizing plate structures at the substrate temperature of 400 ℃ and RF power of 20 W. The deposition rate, residual stress and corrosion rates in HF solution and KOH solution were measured. The experiment results show that the deposition rate of the thin film increases with the increase of SiH4 and NH3 volume flow ratio. There are no significant differences in the corrosion rates in KOH solution and the surface morphologies after corrosion of the silicon nitride film deposited by different electrode structures under the same process conditions. The silicon nitride thin films deposited by the ring electrode have smaller residual stress under the same process conditions. The silicon nitride thin films deposited by the plate electrode show higher corrosion resistance in volume ratio of HF and H20 is 1 ： 5/）） and buffered hydrofluoric acid （BHF） homogenizing plate has little influence on the deposition rate, residual stress, HF solution and KOH solution for the deposited silicon nitride thin films. HF solution （the solution. The gas corrosion rates in HF solution and KOH solution for the deposited silicon nitride thin films.
出处
《微纳电子技术》
北大核心
2017年第10期699-705,共7页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(61376114
51377025)
