摘要
分析了沉积薄膜厚度、PECVD的薄膜沉积温度、反应气体形成的杂质以及多层薄膜之间热应力匹配等因素对薄膜残余应力的影响.应用光刻分割聚酰亚胺(PI)牺牲层、分层生长氮化硅薄膜及快速热退火等工艺减小薄膜残余应力,成功生长出了合格的氮化硅薄膜.
The factors of exerting effect upon the residual stress were analyzed. These factors basically include the thickness of deposition film, the suitable temperature during PECVD, the contanminations created by reaction gas and the match of the thermal stresses in multi - layers. The residual stresses upon siliconnitride thin film are controled by dividing the PI sacrificial layer with lithography, depositing by layer as well as rapid thermal annealing. In the end, the qualified film is successfully deposited.
出处
《福州大学学报（自然科学版）》
CAS
CSCD
北大核心
2009年第1期50-53,共4页
Journal of Fuzhou University(Natural Science Edition)
基金
福建省自然科学基金资助项目(2006J0032)
