摘要
采用PECVD方法制备了无定形SiC薄膜,在此基础上,以SiC为结构层,利用传统的表面硅牺牲层工艺制作了电容式谐振器以及薄膜残余应力的在片检测结构。对SiC的MEMS结构进一步进行了长时间的腐蚀,以获得SiC材料的腐蚀特性。对SiC材料的力学特性进行了研究。深入探讨了退火工艺、薄膜硅碳原子比对SiC薄膜力学特性的影响,同时对薄膜硅碳原子比与制备工艺参数(包括硅烷、甲烷流量)之间的关系进行了实验研究。
PECVD method was adopted to deposit amorphous SiC thin films. Furthermore, capacitance resonators and thin film residual stress testing structures on the chip were fabricated by traditional surface micromachining process, with SiC taken as the structural layer. These MEMS structures were eroded for a long period to test their erosion characteristics. In addition, mechanical properties of silicon carbide were investigated. It was discussed how mechanical properties of SiC thin films were impacted by annealing and C-Si ratio of the thin films. At the meantime, the relationship between C-Si ratio and process conditions (including the flow rates of SiH4 and CH4) were studied by experiments.
出处
《中国机械工程》
EI
CAS
CSCD
北大核心
2005年第14期1310-1312,共3页
China Mechanical Engineering
基金
北京市自然科学基金资助项目(4052017)
