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基于μC/OSⅢ嵌入式无线动态监测系统设计 被引量:7

Design of Embedded Wireless Dynamic Monitoring System Based on μC/OSⅢ
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摘要 材料在长期受载过程中,其承载力与耐久性降低。实时监测其受载情况并进行结构破坏状况分析,能够为材料的安全提供参考。传统的动态监测存在监测精度和集成化不高、稳定性不好等问题。针对这一现象,设计出基于嵌入式技术和无线传输技术相结合的动态监测系统。整个动态监测系统以基于ARM Cortex-M3内核的STM32微控制器为核心,应用μC/OSⅢ嵌入式操作系统完成任务的调度与管理,采用emWin实现人机交互界面的设计,同时对压力传感器进行温度补偿来提高动态监测系统的精度。通过实践验证,动态监测系统的监测精度、实时性和稳定性得到了提高,同时动态监测系统能够很好的监测出材料受载情况,能够为近场动力学理论分析材料的结构破坏状况提供所需数据。实践证明能够达到预期结果。 In the process of long-term service,the bearing capacity and durability of material reduced. It can provide reference for the safety of materials by real-time monitoring of the load and the analysis of the structural damage. There are some problems of traditional dynamic monitoring such as low monitoring precision, low integration and low stability etc. According to this phenomenon, the dynamic monitoring system has been designed which combined embedded technology and wireless transmission technology. The dynamic monitoring system takes the STM32 micro- controller as the core which is based on the ARM Cortex-M3. The dynamic monitoring system completes the task scheduling and management through the μC/OSIII embedded operating system. The design of human-computer interaction interface is completed by emWin. At the same time, in order to improve the accuracy of dynamic monitoring system,we have carried on the temperature compensation of the pressure sensor. The practice has verified that the monitoring accuracy, real-time performance and stability of the whole dynamic monitoring system have been improved. Meanwhile, the dynamic monitoring system can monitor the condition of the material and provide the necessary data for the analysis of material structure damage. The practice has shown that it can achieve the desired results.
出处 《电子器件》 CAS 北大核心 2017年第4期794-799,I0001-I0002,共8页 Chinese Journal of Electron Devices
基金 贵州省国际合作项目(黔科合外G字[2013]7006号) 贵州省联合基金项目(黔科合LH字[2014]7624号) 贵州省留学人员科技活动项目(黔人项目合同[2014]13号)
关键词 嵌入式技术 无线传输 动态监测 近场动力学 μC/OSⅢ embedded technology wireless transmission dynamic monitoring peridynamic μC/OSIII
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