摘要
阶跃恢复二极管是超宽带引信产生窄脉冲信号的核心器件,阶跃恢复二极管参数影响窄脉冲信号的幅度和宽度。依据半导体器件理论和阶跃恢复二极管不同的工作状态,建立阶跃恢复二极管模型,分析阶跃恢复二极管参数对二极管正偏导纳和反偏势垒电容的影响。根据窄脉冲产生等效电路,采用电路暂态分析方法求解窄脉冲幅度和窄脉冲宽度,仿真研究阶跃恢复二极管少数载流子寿命、反向饱和电流、零偏结电容和掺杂分布系数与窄脉冲幅度和窄脉冲宽度关系。仿真结果表明,改变阶跃恢复二极管参数可以调节窄脉冲幅度和窄脉冲宽度,通过产生的窄脉冲与仿真结果对比分析,验证了仿真结果的正确性。
Effects of Step Recovery Diode Parameters on Narrow Pulse Waveform
LI Meng1 , HUANG Zhong-hua2 , SHEN Lei3 （1. Beijing Institute of Nearspace Vehicle＇s System Engineering, Beijing 100076 ,China; 2. School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China; 3. Key Laboratory of Aerospace System Simulation, Beijing Simulation Center, Beijing 100854, China） Abstract： Step recovery diode （SRD） is the kernel of uhra-wideband （UWB） fuze generating a narrow pulse signal, and the parameters of SRD can affect the amplitude and width of narrow pulse signal. A SRD model is established based on the semiconductor device theory and SRD operating states, and the effects of SRD parameters on forward bias admittance and reverse bias barrier capacitance are studied. According to narrow pulse generating equivalent circuit, a circuit transient analysis method is used to solve the expression of narrow pulse amplitude and width. The relationships among SRD minority carrier lifetime, reverse saturation current, bias junction capacitance, doping distribution coefficient, narrow pulse amplitude and pulse width are studied through simulation. The simulated results show that the am- plitude and pulse width of narrow pulse can be adjusted by changing SRD parameters. The correctness of simulated results is verified by comparing with the generated narrow pulse. Koy words： ordnance science and technology; UWB fuze; step recovery diode; narrow pulse; minority carrier lifetime; zero bias junction capacitance
出处
《兵工学报》
EI
CAS
CSCD
北大核心
2017年第8期1490-1497,共8页
Acta Armamentarii
基金
武器装备预先研究项目(62201040601)
关键词
兵器科学与技术
超宽带引信
阶跃恢复二极管
窄脉冲
少数载流子寿命
零偏结电容
ordnance science and technology
UWB fuze
step recovery diode
narrow pulse
minoritycarrier lifetime
zero bias junction capacitance
