摘要
面向微波毫米波低噪声放大电路对高性能低噪声放大器件的需求,进行0.15μm栅长GaAs PHEMT低噪声器件制备工艺的开发,在制备工艺中采用了欧姆特性优异的复合帽层欧姆接触、低寄生电容的介质空洞栅结构以及高击穿电压的双槽结构。在此基础上实现了一款性能优异的Ku波段低噪声放大电路,电路在Ku频段全频带(14~18 GHz)内实现了优良的性能,其噪声系数小于1.3 d B,增益大于17 d B。电路采用5 V电源供电,功耗为250 m W,芯片面积为2 mm×1.6 mm;这款性能优异的Ku频段低噪声放大器特别适用于高信噪比要求的卫星通信等应用。
Towarding the demand of high performance low noise amplifier devices for microwave and millimeter wave low-noise amplifiers,low-noise technology based on 0. 15 μm gate-length Ga As PHEMT is developed. In the process,excellent ohmic characteristic is realized by adopting composite cap ohmic contact,low gate parasitic capacitance is realized by adopting a gate structure with dielectric void and high breakdown voltage is realized by adopting double-trench structure. A high performance Ku-band low-noise amplifier is realized based on it. The LNA circuit achieved excellent performance in the whole Ku band（14 ～ 18 GHz）,NF1. 3 d B,gain17 d B. The circuit consumes 250 m W with 5V power supply,the chip area is 2 mm ×1. 6 mm. This high-performance Ku-band low-noise amplifier is ideal for high SNR applications such as satellite communication and so on.
出处
《微波学报》
CSCD
北大核心
2017年第4期80-84,共5页
Journal of Microwaves
关键词
砷化镓赝晶高电子迁移率晶体管
介质空洞
寄生电容
噪声系数
带宽
GaAs pseudomorphic high electron mobility transistor
dielectric cavity
parasitic capacitance
noise figure
bandwidth
