摘要
针对高功率微波脉冲参数对复杂腔体内器件损伤概率的影响,以TTL门电路为研究对象,利用随机耦合模型对高斯脉冲干扰下复杂腔体内电子器件的损伤概率进行了分析和预测,重点计算分析了高斯脉冲的脉冲上升沿、脉冲间隔、脉冲幅值及脉冲个数对复杂腔体内电子器件损伤概率的影响.计算结果表明,电子器件的损伤概率随脉冲上升沿、脉冲幅值、脉冲个数的增大而增大,随脉冲间隔的增大而减小.该方法的研究为大规模不规则电子系统中电子器件的电磁兼容、电磁效应评估、电磁防护及电磁加固等工作提供了新的指导.
In view of the influence of high power microwave on damage probability of electronic devices in complex cavity,random coupling model is used to analyze and predict the damage probability.We take TTL circuit as an example to analyze the influence of pulse rising edge,pulse amplitude,pulse interval and pulse number of Gauss pulse on its damage probability by using random coupling model.The results show that the damage probability of electronic devices increases with the increase of pulse rising edge,pulse amplitude and pulse number,but decreases with the increase of pulse interval.This method provides a new guidance for the electromagnetic compatibility,electromagnetic effect evaluation,electromagnetic protection and electromagnetic reinforcement of the electronic devices in the large-scale irregular electronic system.
作者
郝建红
潘英
范杰清
HAO Jianhong PAN Ying FAN Jieqing(School of Electrical and Electronic Engineering,North China Electric Power University,Beijing 102206,China)
出处
《河北师范大学学报（自然科学版）》
CAS
2017年第4期308-313,共6页
Journal of Hebei Normal University：Natural Science
基金
国家自然科学基金(61250008)
中央高校基本科研业务费专项资金(2016MS06)
关键词
损伤概率
电子器件
随机耦合模型
高斯脉冲
damage probability
electronic devices
random coupling model
Gauss pulse
