摘要
作为第三代半导体材料的典型代表,氮化镓具有比硅和砷化镓更为优越的性能,其制成的器件可用共晶焊接的方式进行组装。结合影响共晶焊的工艺因素以及试验芯片本身的特质,选取了不同参数进行试验,得到了适用于硅衬底、底面镀金的氮化镓芯片的较好共晶焊工艺参数,证明氮化镓器件的共晶焊接技术可行。
As the third generation of the semiconductor materials, GaN has better performances than both Si and GaAs, and the eutectic process is suitable for GaN devices. Based on the factors which affect the eutectic soldering and the characteristics of the test chip, choose different parameters to do experimentations. Get the right parameters to assemble the GaN-on-Si chip which backside metallization consists of electroplated Au.
出处
《电子工艺技术》
2017年第3期138-140,158,共4页
Electronics Process Technology
基金
国家重大专项基金项目(项目编号:2013ZX01034001-004)
关键词
氮化镓器件
共晶
超声扫描
GaN device
eutectic
ultrasonic inspection
