摘要
通过一种简易化学水浴法将SnO_2薄膜沉积在晶硅衬底上以制备n-SnO_2/p-Si异质结光电器件,这种自制的化学水浴装置非常便宜和方便.采用XRD、SEM、XPS、PL、紫外-可见光分光光度计和霍尔效应测试系统表征了SnO_2薄膜的微结构、光学和电学性能,对SnO_2/p-Si异质结的I-V曲线进行测试并分析,获得明显的光电转换特性.
The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n- SnO2/p-Si heterojunction structure photoelectric device. The self-made chemical bath system is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, SEM, XPS, PL, UV-VIS spectrophotometer and Hall effect measurement. The current-voltage （I-V） curve of SnO2/p-Si het- erojunction device was tested and analyzed in detail. SnO2/p-Si heterojunction shows a prominent visible-light- driven photoelectrical performance under the low intensity light irradiation. Great photoelectric behavior was also obtained.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2017年第2期139-143,共5页
Journal of Infrared and Millimeter Waves
基金
Supported by the Fund of Shanghai Alliance Project(LM201601)
the Fund of the Key Laboratory for Ultrafine Materials of The Ministry of Education(15Q10932)
the Fundamental Research Funds for the Central Universities,China(16D110916)
National Natural Science Foundation of China(11672077)
关键词
SNO2薄膜
化学水浴法
异质结
I-V曲线
SnO2 film, chemical bath method, heterojunction, current-voltage （I-V） characteristics
