摘要
采用SMIC 0.13μm RF CMOS工艺,设计了一款新型的双频段可变增益低噪声放大器(DBVG-LNA),应用于GSM900/DCS1800双频网络通讯系统中.分别采用多谐振网络和开关谐振网络完成输入输出双频段阻抗匹配,采用共栅旁路管和开关切换电阻完成4挡可调增益,有效地解决变频段和变增益兼容难的问题.另外,采用共源共栅差分对结构获取高隔离度和低二次谐波失真.1.2V电源电压,版图面积为0.43μm×0.65μm.仿真结果表明,在GSM900频段电压增益20.6~12.7dB 4挡可调,NF:1.45~2.05dB;在DCS1800频段电压增益19.3~11.2dB 4挡可调,NF:1.36~2.55dB;S_(11)均小于-17dB.
This paper proposed a dual-band variable gain low noise amplifier （DBVG-LNA） by using SMIC 0.13 μm RF CMOS process. The DBVG-LNA can be used in GSM900/DCS1800 dual-band wireless networking communication system. The multi-resonance network and switching resonant network are used respectively to achieve the input and output dual-band impedance matching. The common gate bypass transistor and switching resistance are used to obtain four variable gains, effectively solving the problem where the variable band and variable gain are incompatible. In addition, a cascode differential topology was used to get a high isolation and a low second harmonic distortion. With a supply power of 1.2 V, the layout area of the circuit is 0.43 μm×0.65 μm. The simulation results show that when the voltage gain range is 20.6-12.7 dB, NF is 1.45-2.05 dB in GSM900 band, while when the voltage gain range is 19.3-11.2 dB, NF is 1.36-2.55 dB in DCS1800 band. Moreover, both S11 are below -17 dB.
作者
陈迪平
蒋广成
马俊
CHEN Diping JIANG Guangcheng MA Jun(School of Physics and Electronics, Hunan University, Changsha 410082, China)
出处
《湖南大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2017年第4期118-123,共6页
Journal of Hunan University:Natural Sciences
基金
湖南省科技计划项目(2014FJ1003)
The Planned Science and Technology Project of Hunan Province(2014FJ1003)
关键词
低噪声放大器
双频段
可变增益
阻抗匹配
low noise amplifier
dual-band
variable gain
impedance matching
