摘要
介绍了采用AlGaAs/GaAs异质结材料制作的梁式引线PIN管。该PIN管采用P+AlGaAs阳极异质结结构,GaAs圆片工艺,采用空气桥工艺连接正负电极引线。研制的PIN管VBR≥90V,CT≤0.022pF(VR=5V,f=1 MHz),RS≤4.9Ω(f=470 MHz,IF=20mA),τ≥5ns(IF=10mA)。使用该器件制作了W波段的SPST开关,实现在f=91GHz下,隔离度>30dB,插入损耗≤1.4dB,开关时间≤20.0ns。
A AlGaAs/GaAs heterojunction beam lead PIN diode was described in this paper.This PIN diode used a single P+anode heterojunction structure,and was manufactured by GaAs wafer technology,and air bridge technology was used to link anode and cathode beam.Test results show that the proposed PIN diode could achieve VBR≥90V,CT≤0.022pF(VR=5V,f=1MHz),RS≤4.9Ω(f=470 MHz,IF=20mA),τ≥5ns(IF=10 mA).A W-band SPST switch is successfully developed employing this diode,which shows IS>30dB,IL≤1.4dB,switching time≤20.0ns in f=91GHz.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2016年第2期111-114 141,共5页
Research & Progress of SSE
