摘要
采用GaAs pin二极管，完成了15-40GHz的单刀单掷开关单片的设计、制作．GaAs pin二极管SPST开关单片具有低插损、高隔离、高功率的特点，在15-20GHz带内插损0．6dB，驻波优于1．5，隔离度大于40dB;在20～40GHz带内插损小于1．1dB，驻波优于1．35，隔离度大于35dB．pin二极管SPST开关单片的1dB功率压缩点P-1大于2W，GaAs pin二极管开关单片采用MOCVD生长的GaAs纵向pin二极管材料结构，Ф76mm GaAs圆片工艺加工制作．
A millimeter-wave band GaAs pin diode SPST switch MMIC is presented. It is ideal for low loss, high isolation,and high power applications. In the 15-20GHz frequency range, its insertion loss is less than 0, 6dB,its VSWR is better than 1.5, and its isolation is better than 40dB. In the 20-40GHz frequency range, its insertion loss is less than 1. 1dB, its VSWR is better than 1.35,and its isolation is better than 35dB. The output power of the pin SPST MMIC at ldB compression is 2W. These results are obtained using a vertical GaAs pin diode process on MOCVD material.
