摘要
设计并实现了一种高速大电流的开关驱动器,可用于驱动PIN开关以及IGBT开关等。开展了系统结构、电路和版图技术研究,并采用亚微米CMOS标准工艺进行设计和制造。通过采用一种带隙基准结构提供偏置的方式使电路兼容TTL和CMOS输入,保证良好的温度特性;通过采用传输门功率驱动电路实现三态控制,解决了高速应用时电容馈通效应问题。详细设计了TTL输入转换电路、基准和偏置电路、三态输出和功率驱动等电路;基于0.6μm CMOS工艺重点设计了高速驱动器中功率开关版图。该高速大电路开关驱动器产品的传输速度达到了25 ns,驱动电流达500 mA。
A high-speed and high-current switch driver which could be applied in driving the PIN switch and IGBT switch was designed and implemented. The system structure, circuit and layout tech- nology were researched, and it was designed and manufactured by using the submicron CMOS standard process. The circuit was compatible with TTL and CMOS inputs by using a bandgap reference structure that provided a bias to ensure good temperature characteristics. The transmission gate power driving cir- cuit was used to achieve three-state control, which could solve the capacitor feedthrough effect in high speed applications. Meanwhile, the TTL input conversion circuit, reference and bias circuit, three- state output and power driving circuit were designed in detail. And based on the 0.6 txm CMOS process, the layout of the power switch in the high-speed driver was designed. The high-speed and high-current switch driver performs a transmission speed of up to 25 ns and a drive current of up to 500 mA.
出处
《半导体技术》
CAS
CSCD
北大核心
2017年第4期264-268,共5页
Semiconductor Technology
