摘要
采用微波等离子体化学气相沉积技术,以氧化硼-乙醇溶液作为硼源,制备不同掺硼浓度的金刚石膜。利用扫描电子显微镜、X射线衍射仪、激光拉曼光谱仪、电化学工作站等研究其表面形貌、晶体结构、薄膜质量和电化学性能。结果表明:随硼元素含量升高,金刚石膜的晶体颗粒尺寸先减小后增大,电势窗口由3.1V降至2.6V,阳极电流密度由0.022 7mA·cm^(-2)降至0.011 9mA·cm^(-2),但对背景电流及电化学可逆性几乎不影响。
Diamond films with different boron concentrations are prepared by using microwave plasma chemical vapor deposition with ethanol-boron-oxide solution as boron source.SEM,XRD,Raman spectroscopy and electrochemical work station were used to observe and study the surface morphology,crystal structure and electro-chemical properties of the film.Results show that with the increase of boron concentration,crystalline size of diamond film first decreases and then increases,while the potential window decreases from 3.1 V to 2.6 V and the anodic current decreases from 0.022 7mA·cm^（-2） to 0.011 9 mA·cm^（-2）.But such increase has almost no influence on background current and electro-chemical reversibility.
出处
《金刚石与磨料磨具工程》
CAS
2017年第1期7-12,共6页
Diamond & Abrasives Engineering
基金
国家自然科学基金(No.51604134)
国家科技计划对俄科技合作专项(No.2015DFR50620)
云南省教育厅科学研究项目(No.2016ZZX040)
昆明市科技计划项目(No.2014-04-A-H-02-3085)
关键词
硼掺杂
金刚石膜
电化学性能
boron doping
diamond film
electrochemical properties
