摘要
用离子注入方法,在CVD金刚石薄膜中共注入硼离子和磷离子,得到了电阻率较低的n型金刚石薄膜。Hall效应测试表明,800℃退火后,在注入的磷离子剂量相同的情况下,共注入硼的金刚石薄膜的载流子浓度与单一掺磷的相近,但Hall迁移率高,电阻率低。FTIR结果表明B-H结的形成钝化了硼的受主特性,使磷的施主特性没有被补偿,共掺杂薄膜中载流子浓度没有大幅度减少。EPR和Raman测试结果证实了较高温度退火后的共掺杂薄膜的晶格结构比单掺杂薄膜的更完整,从而有利于提高载流子迁移率,降低电阻率。
Low resistivity n-type diamond films were prepared by boron and phosphorus co-doping with the ion implantation method. Hall effect measurements show that the samples have nearly equivalent carrier concentration while the Hall mobility and conductivity of B-P co-doped diamond films are higher than those of P doped diamond films. FTIR measurements show that the formation of B-H complexes passivates the acceptor of boron and prevents the phosphorus from passivating by boron. EPR and Raman measurements indicate that the B-P co-doped diamond films have more perfect lattice than those of P doped diamond films, which is benefit to improve the carrier mobility and decrease the resistivity.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第4期895-901,共7页
Journal of Inorganic Materials
基金
国家自然科学基金(50082005)
关键词
金刚石薄膜
共掺杂
N型
电阻率
CVD diamond films
co-doping
n-type
resistivity
