摘要
为进行剂量率切换辐照加速方法适用性的数值评估,基于定量损伤物理模型和剂量率切换加速方法实验测试条件,以氢浓度、初始缺陷浓度和温度为变量,对金属绝缘层半导体(Metal insulator semiconductor,MIS)结构进行了系统的数值模拟。结果表明,剂量率切换辐照加速方法的适用性对双极器件氧化层内的氢浓度及缺陷浓度有很强的依赖。因此,剂量率切换加速方法的实验可能对部分器件和电路不再适用。
For the sake of evaluating the feasibility of dose rate switching technique, systematic numerical simulations on the MIS（Metal insulator semiconductor） structure was done based on a quantitative physical model and the experimental conditions of dose rate switching technique, regarding hydrogen concentration, initial defect concentrations and temperature as variables. It turned out that the feasibility of the dose rate switching technique is strongly dependent on the hydrogen concentration and initial defects concentrations in the oxide layer of the bipolar devices. Therefore, the experiments of dose rate switching technique have possible failures on part of devices and circuits.
出处
《辐射研究与辐射工艺学报》
CAS
CSCD
2017年第1期57-64,共8页
Journal of Radiation Research and Radiation Processing
基金
科学挑战专题(JCKY2016212A503)
国家自然科学基金(NSFC Grant No.11404300)
中国工程物理研究院院长基金(President Funding of CAEP No.2014-1-100)~~
关键词
剂量率切换
加速方法
数值模拟
氢浓度
初始缺陷浓度
Dose rate switching, Acceleration methods, Numerical simulation, Hydrogen concentration, Initialdefect concentrations
