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室温纳米压印制备多尺度金碗-金豆纳米天线阵列

Fabrication of Nanoparticle-in-Cavity Nanoantenna Arrays by Room Temperature Nanoimprint Lithography
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摘要 金属纳米结构表现出独特的光电效应,在表面等离激元器件、超分辨光学成像、全光集成等领域有广泛应用。针对一种有实际需求的金碗-金豆(PIC)高分辨纳米腔的研制,提出了基于室温纳米压印技术,结合多参数各向异性刻蚀技术,研究并解决金碗-金豆多尺度纳米结构加工中关键工艺技术问题。利用双层抗刻蚀剂硅水合物(HSQ)/聚丙烯酸甲酯-聚苯乙烯嵌段共聚物(PMMA-b-PS)在刻蚀工艺中的物化性能转变和差异,发展了多参数刻蚀技术,构造出了直径120 nm渐变的碗形金属结构,同步制备了每个碗中只含一个直径约20 nm金豆,有效避免了刻蚀工艺中纳米颗粒的侧向堆积,提高了器件实际应用品质。 Due to the unique photoelectric effect of metallic nanostructures,they are widely applied in the fields of surface plasmon polariton devices,ultra-resolution optical imagings and all-optical integrated circuits and so on.A room temperature nanoimprinting lithography was proposed to fabricate a high resolution particle-in-cavity(PIC)nanocavity with actual demand.And combing with the multi-parameter anisotropy etching technology,several critical issues in the fabrication process of the PIC multiscale nanostructure were studied and resolved.A multiparameter etching technology was developed by using the change and difference of physical and chemical properties of the bilayer photoresist consisting of hydrogen silsesquioxane(HSQ)and photoresist polymethyl methacrylate bending polystyrene(PMMA-b-PS)in the etching process.And the gradient multiscale PIC structures with the diameter of 120 nm were obtained,simultaneously the nanoparticle with the diameter of about 20 nm were fabricated,with only one nanoparticle dressing in each nanocavity.The experimental results demonstrate that this method can be well controllable to promote the quality of nanodevices without any nanoparticle lateral stacking in the etching process.
出处 《微纳电子技术》 北大核心 2017年第3期173-180,共8页 Micronanoelectronic Technology
基金 国家质量基础的共性技术研究与应用资助项目(2016YFF0200602) 国家纳米科技重点研发计划资助项目(2016YFA0200901)
关键词 多尺度纳米刻蚀 金碗-金豆(PIC) 室温纳米压印 双层抗刻蚀剂 微相分离 multiscale nanoetching particle-in-cavity(PIC) room temperature nanoimprinting lithography bilayer resist microphase-separation
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