摘要
GaN具有禁带宽度大、热导率高、电子饱和漂移速度大和介电常数小等特点,在发光二极管、激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。介绍了GaN基半导体材料的特性、制备方法及在光电子和微电子器件领域的应用,并讨论了今后的发展趋势。
GaN have the characteristics of wide bandgap, high thermal conductivity, large electron saturation shift velocity and dielectric constant. They have wide applications in fields such as light emitting diodes, laser diodes, high performance UV detectors and high temperature, high frequency, large power semiconductor devices. The paper introduces the performance and preparation methods of GaN semiconductor materials and their applications in optoelectronics and rnicroelectronics fields, followed by discussed the development trend in the future.
出处
《广东化工》
CAS
2017年第2期84-86,共3页
Guangdong Chemical Industry
关键词
氮化镓
半导体
制备方法
应用
GaN： Semiconductor： Preparation methods： Applications
