摘要
GaN具有禁带宽度大、热导率高、电子饱和漂移速度大、临界击穿电压高和介电常数小等特点 ,在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。本文介绍了GaN基半导体材料的各种特性、材料生长以及在光电器件领域的应用 。
GaN have the characteristics of wide bandgap, high thermal conductivity, large electron saturation shift velocity and low dielectric constant. They have wide applications in those fields such as high brightness light emitting diodes, short wavelength laser diodes, high performance UV detector, and high temperature, high frequency, large power semiconductor devices. This paper introduces the known characteristics, growth methods, heterostructure and its applications in optoelectronic and microelectronic fields of GaN-based semiconductor materials, followed by our opinions of the remaining difficulties and analysis for further studies.
出处
《高技术通讯》
EI
CAS
CSCD
2002年第3期104-110,共7页
Chinese High Technology Letters
基金
86 3计划 ( 86 3 715 0 11 0 0 33)
国家自然科学基金 ( 6 9976 0 0 8)资助项目
