摘要
通过在调制掺杂Al0 2 2 Ga0 78N/GaN异质结构上淀积Pb(Zr0 53 Ti0 4 7)O3 (PZT)铁电薄膜 ,我们发展了一种基于AlxGa1-xN/GaN异质结构的金属 铁电 半导体 (MFS)结构。在高频电容 电压 (C V)特性测量中 ,发现Al0 2 2 Ga0 78N/GaN异质界面二维电子气 ( 2DEG)的浓度在 -1 0V偏压下从 1 5 6× 1 0 13 cm-2 下降为 5 6× 1 0 12 cm-2 。由于PZT薄膜的铁电极化 ,在 -1 0V偏压下可以观察到宽度为 0 2V的铁电C V窗口 ,表明在没有铁电极化方向反转的条件下 ,PZT/AlxGa1-xN/GaNMFS结构也能出现存储特性。因为 2DEG带来的各种优点 ,可以认为AlxGa1-xN/GaN异质结构在以存储器为目标的MFS场效应晶体管中有重要应用。
The Al xGa 1-xN/GaN based metal ferroelectric semiconductor (MF S) structure was fabricated by depositing a ferroelectric Pb (Zr 0 53 Ti 0 47) O 3 (PZT) film on a modulation doped Al\-\{0 22\}Ga\-\{0 78\}N/Ga N heterostructure.In the high frequency capacitance voltage (C V) measure ment,it is found that the sheet concentration of the two dimensional electron g as (2DEG) at the Al 0 22Ga 0 78N/GaN heterointerface decreases from 1 56×10 13cm -2 to 5 6×10 12cm -2 under the -10V appli ed bias after the PZT film is deposited on the Al 0 22Ga 0 78N/GaN h e terostructure. Due to the ferroelectric polarization of the PZT film, a ferroele ctric C V window of 0 2V in width near -10V is observed,indicating that th e Al xGa 1-xN MFS structure can achieve memory performance without th e reversal of the ferroelectric polarization.Due to their numerous advantages b rought by the 2DEG,Al xGa 1-xN heterostructures are the promising semiconductor chan nel candidates for the MFS field effect transistor.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2001年第S1期57-60,共4页
Chinese Journal of Luminescence
基金
国家自然科学基金资助项目 ( 6 980 6 0 0 6 ,6 9976 0 14和 6 99870 0 1)
国家重点基础研究项目专项支持 (G2 0 0 0 0 6 83)
国家高技术研究和发展项目
日本科学促进协会前沿研究项目 (JSPS RFTF96P0 0 2 0 1)~~
